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RJK0208DPA-00-J53 Datasheet
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Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Match & Start : RJK0208DPA-00-J53
Renesas Electronics
25V, 65A, 2.0mΩ max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
25V, 70A, 1.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
25V, 50A, 2.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
25V, 65A, 2.0mΩ max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
25V, 70A, 1.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Built in SBD N Channel Power MOS FET High Speed Power Switching
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