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PJP1N80

  

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PanJit
PANJIT INTERNATIONAL
PJP1N80 800V N-Channel Enhancement Mode MOSFET

FEATURES
• 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives


other parts : P1N80  PJU1N80  U1N80  
PJP1N80 PDF

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