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MMST540114

  

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Diodes
Diodes Incorporated.
MMST5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST5551)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)


other parts : MMST5401-7-F  
MMST5401 PDF
Transys-Electronics
Transys Electronics Limited
MMST5401 SOT-323 Plastic-Encapsulated Transistors

TRANSISTOR (PNP)

FEATURES
   Power dissipation
      PCM: 0.2 W (Tamb=25℃)
   Collector current
      ICM: -0.2 A
   Collector-base voltage
      V(BR)CBO: -160 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃

MMST5401 PDF
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.
MMST5401 TRANSISTOR(PNP)

FEATURES
● Complementary to MMST5551
● Small Surface Mount Package
● Ideal for Medium Power Amplificationand Switching

MMST5401 PDF
MCC
Micro Commercial Components
MMST5401 PNP Small Signal Transistors

Features
• Power dissipation: 200mW (Tamb=25°C)
• Collector current: -0.2A
• Marking : K4M
• Operating and Storage junction temperature range -55°C to + 150°C
• Case Material:Molded Plastic. UL Flammability
   Classificatio Rating 94-0 and MSL Rating 1


other parts : MMST5401-TP  
MMST5401 PDF
HOTTECH
GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
MMST5401 Plastic-Encapsulate Transistors

FEATURES
   Epitaxial planar die construction.
   Complementary PNP type available(MMST5551).
   Also available in lead free version.

MMST5401 PDF
Diodes
Diodes Incorporated.
MMST5401_Rev8-2 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST5551)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)


other parts : MMST5401-7-F_Rev8-2  
MMST5401 PDF
Twtysemi
TY Semiconductor
MMST5401 Ultra-Small Surface Mount Package

■ Features
● Ultra-Small Surface Mount Package
● Ideal for Medium Power Amplification and
● Complementary NPN Type Available(MMST5551)

MMST5401 PDF
Diodes
Diodes Incorporated.
MMST5401_RevB-1 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST5551)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)

MMST5401 PDF
Rectron
Rectron Semiconductor
MMST5401 SOT-323 BIPOLAR TRANSISTORS

TRANSISTOR (PNP)

FEATURES
* Power dissipation
   Pcm: 0.2 W (Tamb=25°C)
* Collector current
   Icm: -0.2 A
* Collector-base voltage
   V(BR)CBO: -160 V
* Operationg and storage junction temperature range
   TJ, Tstg: -55°C to +150°C

MMST5401 PDF
BILIN
Galaxy Semi-Conductor
MMST5401 PNP General Purpose Transistor

FEATURES
● Epitaxial planar die construction.
● Complementary NPN type available (MMST5551).
● Also available in lead free version.

APPLICATIONS
● Ideal for medium power amplification and switching.

MMST5401 PDF
WINNERJOIN
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
MMST5401 TRANSISTOR (PNP)

FEATURES
   Power dissipation
      PCM: 0.2 W (Tamb=25℃)
   Collector current
      ICM: -0.2 A
   Collector-base voltage
      V(BR)CBO: -160 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃

MMST5401 PDF
MCC
Micro Commercial Components
MMST5401_2008 PNP Small Signal Transistors

Features
• Power dissipation: 200mW (Tamb=25°C)
• Collector current: -0.2A
• Marking : K4M
• Operating and Storage junction temperature range -55°C to + 150°C
• Case Material:Molded Plastic. UL Flammability
   Classificatio Rating 94-0 and MSL Rating 1


other parts : MMST5401-TP_2008  
MMST5401 PDF

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