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MJ900

  

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Comset
Comset Semiconductors
MJ900 COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic
Darlington configuration, and are mounted in JEDEC TO-3 metal case.
They are intended for use in power linear and switching applications.
Their complementary NPN types are the MJ1000 and MJ1001 respectively.
Compliance to RoHS


other parts : MJ901  
MJ900 PDF
Iscsemi
Inchange Semiconductor
MJ900 Silicon PNP Darlington Power Transistor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO=-60V(Min.)
• High DC Current Gain-
   : hFE= 1000(Min.)@IC=-3A
• Low Collector Saturation Voltage-
   : VCE (sat)=-2.0V(Max.)@ IC=-3A
  
APPLICATIONS
• Designed for use as output devices in complementary general purpose amplifier applications.

MJ900 PDF
NJSEMI
New Jersey Semiconductor
MJ900 COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively.

 


other parts : MJ1000  MJ1001  MJ901  
MJ900 PDF
Central-Semiconductor
Central Semiconductor
MJ900 Power Transistors

Shaded areas indicate Darlington.
+Uses 60 mil leads.
See mechanical specifications on page 209


other parts : BUY69C  MJ1000  MJ1001  MJ10012  MJ10023  MJ11011  MJ11012  MJ11013  MJ11014  MJ11015  
MJ900 PDF
Comset
Comset Semiconductors
MJ900_ COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively.


other parts : MJ1000  MJ901_  MJ1001  
MJ900_ PDF

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