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MC74VHC1G08

  

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ETL
E-Tech Electronics LTD
MC74VHC1G08 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  MC74VHC1G08DF  MC74VHC1G08DT  
MC74VHC1G08 PDF
ON-Semiconductor
ON Semiconductor
MC74VHC1G08 Single 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74VHC1G08 to be used to interface 5.0 V circuits to 3.0 V circuits.

Features
• High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V
• Low Power Dissipation: ICC = 1.0 μA (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62
• These Devices are Pb−Free and are RoHS Compliant
• NLV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q100
   Qualified and PPAP Capable


other parts : MC74VHC1G08DFT1G  NLVVHC1G08DFT1G  MC74VHC1G08DFT2G  NLVVHC1G08DFT2G  MC74VHC1G08DTT1G  NLV74VHC1G08DTT1G  
MC74VHC1G08 PDF
LRC
Leshan Radio Company,Ltd
MC74VHC1G08 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08DF  MC74VHC1G08DT  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  
MC74VHC1G08 PDF
Leshan-Radio
Leshan Radio Company
MC74VHC1G08 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08DF  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DT  MC74VHC1G08DTT1  MC74VHC1G08DTT3  
MC74VHC1G08 PDF
ETL
E-Tech Electronics LTD
MC74VHC1G08DT 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  MC74VHC1G08DF  
MC74VHC1G08DT PDF
LRC
Leshan Radio Company,Ltd
MC74VHC1G08DF 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DT  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  
MC74VHC1G08DF PDF
Leshan-Radio
Leshan Radio Company
MC74VHC1G08DT 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DF  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  
MC74VHC1G08DT PDF
ETL
E-Tech Electronics LTD
MC74VHC1G08DF 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  MC74VHC1G08DT  
MC74VHC1G08DF PDF
LRC
Leshan Radio Company,Ltd
MC74VHC1G08DT 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DF  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT1  MC74VHC1G08DTT3  
MC74VHC1G08DT PDF
Leshan-Radio
Leshan Radio Company
MC74VHC1G08DF 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DT  MC74VHC1G08DTT1  MC74VHC1G08DTT3  
MC74VHC1G08DF PDF
ON-Semiconductor
ON Semiconductor
MC74VHC1G08_99 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This allows the MC74VHC1G08 to be used to interface 5V circuits to 3V circuits.

• High Speed: tPD = 3.5ns (Typ) at VCC = 5V
• Low Power Dissipation: ICC = 2µA (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V


other parts : MC74VHC1G08DFT1  
MC74VHC1G08_99 PDF
LRC
Leshan Radio Company,Ltd
MC74VHC1G08DTT1 2-Input AND Gate

The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G08 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
This allows the MC74VHC1G08 to be used to interface 5 V circuits to 3 V circuits.

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 15


other parts : MC74VHC1G08  MC74VHC1G08DF  MC74VHC1G08DT  MC74VHC1G08DFT1  MC74VHC1G08DFT2  MC74VHC1G08DFT4  MC74VHC1G08DTT3  
MC74VHC1G08DTT1 PDF

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