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MBR3060WT

  

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Iscsemi
Inchange Semiconductor
MBR3060WT Schottky Barrier Rectifier

FEATURES
• Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating
• Low forward voltage
• Guarding for stress protection
• 150℃ operating junction temperature
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

 

MBR3060WT PDF
MCC
Micro Commercial Components
MBR3060WT 30 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features
● High Surge Capacity
● Low Power Loss, High Efficiency
● High Current Capability, Low VF
● Metal of silicon Rectifier, majority Carrier Conduction
● Guard Ring For Transient Protection
● Plastic Package Has UL Flammability Classification 94V-0

 


other parts : MBR3020WT  MBR3030WT  MBR3035WT  MBR3040WT  MBR3045WT  
MBR3060WT PDF
SMC
Sangdest Microelectronic (Nanjing) Co., Ltd
MBR3060WT SCHOTTKY RECTIFIER

Features:
• 150°C TJ operation
• Center tap TO-247AD package
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon

MBR3060WT PDF

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