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MBR3060

  

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Iscsemi
IscsemiIscsemi
MBR3060 Schottky Barrier Rectifier

FEATURES
• Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating
• Low forward voltage
• Guarding for stress protection
• 150℃ operating junction temperature
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

 

MBR3060 PDF
MCC
MCCMCC
MBR3060 30 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability

 


other parts : MBR30100  MBR3020  MBR3030  MBR3035  MBR3040  MBR3045  MBR3080  
MBR3060 PDF
GXELECTRONICS
GXELECTRONICSGXELECTRONICS
MBR3060 30 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability

 


other parts : MBR30100  MBR3020  MBR3030  MBR3035  MBR3040  MBR3045  MBR3080  
MBR3060 PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
MBR3060 SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 60 VOLTS

Axial Lead Rectifier

. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

• Extremely Low Vf
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated


other parts : MBR3060RL  
MBR3060 PDF
PFS
PFSPFS
MBR3060 Schottky Barrier Rectifier

Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability

 


other parts : MBR30100  MBR3020  MBR3030  MBR3035  MBR3040  MBR3045  MBR3080  
MBR3060 PDF
PFS
PFSPFS
MBR3060W 30 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features
● High Surge Capacity
● Low Power Loss, High Efficiency
● High Current Capability, Low VF
● Metal of silicon Rectifier, majority Carrier Conduction
● Guard Ring For Transient Protection
● Plastic Package Has UL Flammability Classification 94V-0

 


other parts : MBR30100W  MBR3020W  MBR3030W  MBR3035W  MBR3040W  MBR3045W  MBR3080W  
MBR3060W PDF
MCC
MCCMCC
MBR3060W 30 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features
● High Surge Capacity
● Low Power Loss, High Efficiency
● High Current Capability, Low VF
● Metal of silicon Rectifier, majority Carrier Conduction
● Guard Ring For Transient Protection
● Plastic Package Has UL Flammability Classification 94V-0

 


other parts : MBR30100W  MBR3020W  MBR3030W  MBR3035W  MBR3040W  MBR3045W  MBR3080W  
MBR3060W PDF
Iscsemi
IscsemiIscsemi
MBR3060PT Schottky Barrier Rectifier

FEATURES
• Low power loss,high efficiency
• High surge capability
• Metal silicon rectifier, majonty carrier conduction
• Guard ring for over voltage protection
• High Current Capability, low forward voltage drop
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• For use in low voltage ,high frequency inverters,free wheeling and polarity

MBR3060PT PDF
Formosa
FormosaFormosa
MBR3060CT 30A High Barrier Power Schottky Rectifiers - 40V-200V

30A High Barrier Power Schottky Rectifiers - 40V-200V

Features
150°C operating junction temperature.
Low power loss, high efficiency.
High current capability
High surge capability.
Guardring for overvoltage protection.
Low stored charge majority carrier conduction
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of MIL-STD-19500 /228
Suffix "-H" indicates


other parts : MBR30100CT  MBR30100CT-H  MBR30150CT  MBR30150CT-H  MBR30200CT  MBR30200CT-H  MBR3040CT  MBR3040CT-H  MBR3045CT  MBR3045CT-H  
MBR3060CT PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
MBR3060RL SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 60 VOLTS

Axial Lead Rectifier

. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

• Extremely Low Vf
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated


other parts : MBR3060  
MBR3060RL PDF

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