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MBM29DL164BE

  

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Fujitsu
Fujitsu
MBM29DL164BE FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE PDF
Fujitsu
Fujitsu
MBM29DL164BE12TN FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL163TE-12PN  MBM29DL163TE-70PN  MBM29DL161TE-12TN  MBM29DL161TE-12TR  MBM29DL161TE-12PBT  MBM29DL161BE-12TN  MBM29DL161BE-12TR  MBM29DL161BE-12PBT  MBM29DL162TE-12TN  MBM29DL162TE-12TR  
MBM29DL164BE12TN PDF
Fujitsu
Fujitsu
MBM29DL164BE90TR FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE90TR PDF
Fujitsu
Fujitsu
MBM29DL164BE70TN FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE70TN PDF
Fujitsu
Fujitsu
MBM29DL164BE12TR FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL163TE-12PN  MBM29DL163TE-70PN  MBM29DL161TE-12TN  MBM29DL161TE-12TR  MBM29DL161TE-12PBT  MBM29DL161BE-12TN  MBM29DL161BE-12TR  MBM29DL161BE-12PBT  MBM29DL162TE-12TN  MBM29DL162TE-12TR  
MBM29DL164BE12TR PDF
Fujitsu
Fujitsu
MBM29DL164BE90TN FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE90TN PDF
Fujitsu
Fujitsu
MBM29DL164BE70TR FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE70TR PDF
Fujitsu
Fujitsu
MBM29DL164BE-70TR FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE-70TR PDF
Fujitsu
Fujitsu
MBM29DL164BE70PBT FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE70PBT PDF
Fujitsu
Fujitsu
MBM29DL164BE-12TN FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL163TE-12PN  MBM29DL163TE-70PN  MBM29DL161TE-12TN  MBM29DL161TE-12TR  MBM29DL161TE-12PBT  MBM29DL161BE-12TN  MBM29DL161BE-12TR  MBM29DL161BE-12PBT  MBM29DL162TE-12TN  MBM29DL162TE-12TR  
MBM29DL164BE-12TN PDF
Fujitsu
Fujitsu
MBM29DL164BE-90TR FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE-90TR PDF
Fujitsu
Fujitsu
MBM29DL164BE90PBT FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
MBM29DL16XTE/BE are


other parts : MBM29DL161BE  MBM29DL161BE-70PBT  MBM29DL161BE-70TN  MBM29DL161BE-70TR  MBM29DL161BE-90PBT  MBM29DL161BE-90TN  MBM29DL161BE-90TR  MBM29DL161TE  MBM29DL161TE-70PBT  MBM29DL161TE-70TN  
MBM29DL164BE90PBT PDF

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