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TI
Texas Instruments
LM5109AMA/NOPB High Voltage 1A Peak Half Bridge Gate Driver

Description
The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while
consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The
device is available in the SOIC and the thermally enhanced WSON packages.

Features
• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1A peak Output Current (1.0A Sink / 1.0A Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 108V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700
• Packages:
– SOIC
– WSON-8 (4 mm x 4 mm)

Applications
• Current Fed Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters


other parts : LM5109A  LM5109AMA  LM5109AMAX  LM5109AMAX/NOPB  LM5109ASD  LM5109ASD/NOPB  LM5109ASDX  LM5109ASDX/NOPB  
LM5109AMA/NOPB PDF
TI
Texas Instruments
LM5109ASD High Voltage 1A Peak Half Bridge Gate Driver

Description
The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while
consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The
device is available in the SOIC and the thermally enhanced WSON packages.

Features
• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1A peak Output Current (1.0A Sink / 1.0A Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 108V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700
• Packages:
– SOIC
– WSON-8 (4 mm x 4 mm)

Applications
• Current Fed Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters


other parts : LM5109A  LM5109AMA  LM5109AMA/NOPB  LM5109AMAX  LM5109AMAX/NOPB  LM5109ASD/NOPB  LM5109ASDX  LM5109ASDX/NOPB  
LM5109ASD PDF
National-Semiconductor
National ->Texas Instruments
LM5109B High Voltage 1A Peak Half Bridge Gate Driver

General Description
The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.

Features
■ Drives both a high-side and low-side N-Channel MOSFET
■ 1A peak output current (1.0A sink / 1.0A source)
■ Independent TTL compatible inputs
■ Bootstrap supply voltage to 108V DC
■ Fast propagation times (30 ns typical)
■ Drives 1000 pF load with 15ns rise and fall times
■ Excellent propagation delay matching (2 ns typical)
■ Supply rail under-voltage lockout
■ Low power consumption
■ Pin compatible with ISL6700

Typical Applications
■ Current Fed push-pull converters
■ Half and Full Bridge power converters
■ Solid state motor drives
■ Two switch forward power converters

Package
■ SOIC-8
■ LLP-8 (4 mm x 4 mm)


other parts : LM5109BMA  LM5109BMAX  LM5109BSD  LM5109BSDX  
LM5109B PDF
National-Semiconductor
National ->Texas Instruments
LM5109BMAX High Voltage 1A Peak Half Bridge Gate Driver

General Description
The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.

Features
■ Drives both a high-side and low-side N-Channel MOSFET
■ 1A peak output current (1.0A sink / 1.0A source)
■ Independent TTL compatible inputs
■ Bootstrap supply voltage to 108V DC
■ Fast propagation times (30 ns typical)
■ Drives 1000 pF load with 15ns rise and fall times
■ Excellent propagation delay matching (2 ns typical)
■ Supply rail under-voltage lockout
■ Low power consumption
■ Pin compatible with ISL6700

Typical Applications
■ Current Fed push-pull converters
■ Half and Full Bridge power converters
■ Solid state motor drives
■ Two switch forward power converters

Package
■ SOIC-8
■ LLP-8 (4 mm x 4 mm)


other parts : LM5109B  LM5109BMA  LM5109BSD  LM5109BSDX  
LM5109BMAX PDF
TI
Texas Instruments
LM5109BSD/NOPB High Voltage 1-A Peak Half-Bridge Gate Driver

Description
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating
high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally enhanced 8-pin WSON packages.

Features
• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
• Inputs Compatible With Independent TTL and CMOS
• Bootstrap Supply Voltage to 108-V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000-pF Load With 15-ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Undervoltage Lockout
• Low Power Consumption
• 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

Applications
• Current-Fed, Push-Pull Converters
• Half- and Full-Bridge Power Converters
• Solid-State Motor Drives
• Two-Switch Forward Power Converters


other parts : LM5109B  LM5109BMA  LM5109BMA/NOPB  LM5109BMAX  LM5109BMAX/NOPB  LM5109BSD  LM5109BSDX  LM5109BSDX/NOPB  
LM5109BSD/NOPB PDF
Texas-Instruments
Texas Instruments
LM5109MA 100V/1A Peak Half Bridge Gate Driver

DESCRIPTION
The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter
technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced WSON-8 packages.

FEATURES
• Drives Both a High Side and Low Side N-Channel MOSFET
• 1A Peak Output Current (1.0A Sink / 1.0A Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 118V DC
• Fast Propagation Times (27 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Under-voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700

TYPICAL APPLICATIONS
• Current Fed Push-pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters


other parts : LM5109  LM5109MA/NOPB  LM5109MAX  LM5109MAX/NOPB  
LM5109MA PDF
National-Semiconductor
National ->Texas Instruments
LM5109AMA High Voltage 1A Peak Half Bridge Gate Driver

General Description
The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low side and the high-side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.

Features
Drives both a high-side and low-side N-Channel MOSFET
1A peak output current (1.0A sink / 1.0A source)
Independent TTL compatible inputs
Bootstrap supply voltage to 108V DC
Fast propagation times (30 ns typical)
Drives 1000 pF load with 15ns rise and fall times
Excellent propagation delay matching (2 ns typical)
Supply rail under-voltage lockout
Low power consumption
Pin compatible with ISL6700

Typical Applications
Current Fed push-pull converters
Half and Full Bridge power converters
Solid state motor drives
Two switch forward power converters

Package
SOIC-8
LLP-8 (4 mm x 4 mm)


other parts : LM5109A  LM5109AMAX  LM5109ASD  LM5109ASDX  
LM5109AMA PDF
National-Semiconductor
National ->Texas Instruments
LM5109SD 100V / 1A Peak Half Bridge Gate Driver

General Description
The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.

Features
Drives both a high side and low side N-Channel MOSFET
1A peak output current (1.0A sink / 1.0A source)
Independent TTL compatible inputs
Bootstrap supply voltage to 118V DC
Fast propagation times (27 ns typical)
Drives 1000 pF load with 15ns rise and fall times
Excellent propagation delay matching (2 ns typical)
Supply rail under-voltage lockout
Low power consumption
Pin compatible with ISL6700

Typical Applications
Current Fed push-pull converters
Half and Full Bridge power converters
Solid state motor drives
Two switch forward power converters

Package
SOIC-8
LLP-8 (4 mm x 4 mm)


other parts : LM5109  LM5109MA  LM5109MAX  LM5109SDX  
LM5109SD PDF
TI
Texas Instruments
LM5109AMAX/NOPB High Voltage 1A Peak Half Bridge Gate Driver

Description
The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while
consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The
device is available in the SOIC and the thermally enhanced WSON packages.

Features
• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1A peak Output Current (1.0A Sink / 1.0A Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 108V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700
• Packages:
– SOIC
– WSON-8 (4 mm x 4 mm)

Applications
• Current Fed Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters


other parts : LM5109A  LM5109AMA  LM5109AMA/NOPB  LM5109AMAX  LM5109ASD  LM5109ASD/NOPB  LM5109ASDX  LM5109ASDX/NOPB  
LM5109AMAX/NOPB PDF
TI
Texas Instruments
LM5109ASDX High Voltage 1A Peak Half Bridge Gate Driver

Description
The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while
consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The
device is available in the SOIC and the thermally enhanced WSON packages.

Features
• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1A peak Output Current (1.0A Sink / 1.0A Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 108V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700
• Packages:
– SOIC
– WSON-8 (4 mm x 4 mm)

Applications
• Current Fed Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters


other parts : LM5109A  LM5109AMA  LM5109AMA/NOPB  LM5109AMAX  LM5109AMAX/NOPB  LM5109ASD  LM5109ASD/NOPB  LM5109ASDX/NOPB  
LM5109ASDX PDF
TI
Texas Instruments
LM5109BMA High Voltage 1-A Peak Half-Bridge Gate Driver

Description
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating
high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally enhanced 8-pin WSON packages.

Features
• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
• Inputs Compatible With Independent TTL and CMOS
• Bootstrap Supply Voltage to 108-V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000-pF Load With 15-ns Rise and Fall Times
• Excellent Propagation Delay Matching (2 ns Typical)
• Supply Rail Undervoltage Lockout
• Low Power Consumption
• 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

Applications
• Current-Fed, Push-Pull Converters
• Half- and Full-Bridge Power Converters
• Solid-State Motor Drives
• Two-Switch Forward Power Converters


other parts : LM5109B  LM5109BMA/NOPB  LM5109BMAX  LM5109BMAX/NOPB  LM5109BSD  LM5109BSD/NOPB  LM5109BSDX  LM5109BSDX/NOPB  
LM5109BMA PDF
National-Semiconductor
National ->Texas Instruments
LM5109BSD High Voltage 1A Peak Half Bridge Gate Driver

General Description
The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.

Features
■ Drives both a high-side and low-side N-Channel MOSFET
■ 1A peak output current (1.0A sink / 1.0A source)
■ Independent TTL compatible inputs
■ Bootstrap supply voltage to 108V DC
■ Fast propagation times (30 ns typical)
■ Drives 1000 pF load with 15ns rise and fall times
■ Excellent propagation delay matching (2 ns typical)
■ Supply rail under-voltage lockout
■ Low power consumption
■ Pin compatible with ISL6700

Typical Applications
■ Current Fed push-pull converters
■ Half and Full Bridge power converters
■ Solid state motor drives
■ Two switch forward power converters

Package
■ SOIC-8
■ LLP-8 (4 mm x 4 mm)


other parts : LM5109B  LM5109BMA  LM5109BMAX  LM5109BSDX  
LM5109BSD PDF

1

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