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K9F1G08U0D

  

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Samsung
SamsungSamsung
K9F1G08U0D 128M x 8 Bit NAND Flash Memory

Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed intypical 2mson a (128K+4K)Byte block. Data in the data register can be read out at 30nscycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command


other parts : K9F1G08U0D-H  K9F1G08U0D-S  
K9F1G08U0D PDF
Samsung
SamsungSamsung
K9F1G08U0D-H 128M x 8 Bit NAND Flash Memory

Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed intypical 2mson a (128K+4K)Byte block. Data in the data register can be read out at 30nscycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command


other parts : K9F1G08U0D  K9F1G08U0D-S  
K9F1G08U0D-H PDF
Samsung
SamsungSamsung
K9F1G08U0D-S 128M x 8 Bit NAND Flash Memory

Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed intypical 2mson a (128K+4K)Byte block. Data in the data register can be read out at 30nscycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command


other parts : K9F1G08U0D  K9F1G08U0D-H  
K9F1G08U0D-S PDF

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