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IXBH16N170A High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

• Monolithic fast reverse diode
• High Blocking Voltage
• JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
• Low switching losses
• High current handling capability
• MOS Gate turn-on
   - drive simplicity
• Molding epoxies meet UL94V-0
   flammability classification

• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• Capacitor discharge circuits

• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw, (isolated mounting screw hole)

other parts : IXBT16N170A  


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