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IXBH16N170

  

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IXYS
IXYS CORPORATION
IXBH16N170 High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

Features
• High Blocking Voltage
• JEDEC TO-268 surface and JEDEC TO-247 AD
• Low conduction losses
• High current handling capability
• MOS Gate turn-on
   - drive simplicity
• Molding epoxies meet UL 94 V-0
   flammability classification

Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• Capacitor discharge circuits

Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw, (isolated mounting screw hole)


other parts : IXBT16N170  
IXBH16N170 PDF
IXYS
IXYS CORPORATION
IXBH16N170A High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

Features
• Monolithic fast reverse diode
• High Blocking Voltage
• JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
• Low switching losses
• High current handling capability
• MOS Gate turn-on
   - drive simplicity
• Molding epoxies meet UL94V-0
   flammability classification

Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• Capacitor discharge circuits

Advantages
• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw, (isolated mounting screw hole)


other parts : IXBT16N170A  
IXBH16N170A PDF

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