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IXBH10N170

  

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IXYS
IXYS CORPORATION
IXBH10N170 High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

Features
● High Blocking Voltage
● JEDEC TO-268 surface and JEDEC TO-247 AD
● Low conduction losses
● High current handling capability
● MOS Gate turn-on
   - drive simplicity
● Molding epoxies meet UL 94 V-0 flammability classification

Applications
● AC motor speed control
● Uninterruptible power supplies (UPS)
● Switched-mode and resonant-mode power supplies
● Capacitor discharge circuits

Advantages
● High power density
● Suitable for surface mounting
● Easy to mount with 1 screw,
   (isolated mounting screw hole)


other parts : IXBT10N170  
IXBH10N170 PDF

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