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IRFU310B

  

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KERSEMI
Kersemi Electronic Co., Ltd.
IRFU310B 400V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.


other parts : IRFR310B  
IRFU310B PDF
Fairchild
Fairchild Semiconductor
IRFU310B 400V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.


other parts : IRFR310B  
IRFU310B PDF

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