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IRFU310

  

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Vishay
Vishay Semiconductors
IRFU310_2008 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR310_2008  IRFR310PBF_2008  IRFR310TR_2008  IRFR310TRA_2008  IRFR310TRL_2008  IRFR310TRLA_2008  IRFR310TRLPBF_2008  IRFR310TRLPBFA_2008  IRFR310TRPBF_2008  IRFR310TRPBFA_2008  
IRFU310 PDF
KERSEMI
Kersemi Electronic Co., Ltd.
IRFU310 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR310  IRFR310PBF  IRFR310TRA  IRFR310TRLA  IRFR310TRLPBFA  IRFR310TRPBFA  IRFR310TRRPBFA  IRFU310PBF  SIHFR310  SIHFR310-E3  
IRFU310 PDF
Vishay
Vishay Semiconductors
IRFU310 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR310  SIHFR310  SIHFU310  IRFR310TRLPBFA  IRFR310TRPBFA  IRFR310TRRPBFA  SIHFR310TL-E3A  SIHFR310T-E3A  SIHFR310TR-E3A  SIHFR310-GE3  
IRFU310 PDF
IR
International Rectifier
IRFU310 Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)



other parts : IRFR310  
IRFU310 PDF
KERSEMI
Kersemi Electronic Co., Ltd.
IRFU310B 400V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.


other parts : IRFR310B  
IRFU310B PDF
Fairchild
Fairchild Semiconductor
IRFU310A Advanced Power MOSFET

FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 2.815Ω (Typ.)



other parts : IRFR310A  
IRFU310A PDF
Fairchild
Fairchild Semiconductor
IRFU310B 400V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.


other parts : IRFR310B  
IRFU310B PDF
Vishay
Vishay Semiconductors
IRFU310PBF_2008 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR310_2008  IRFR310PBF_2008  IRFR310TR_2008  IRFR310TRA_2008  IRFR310TRL_2008  IRFR310TRLA_2008  IRFR310TRLPBF_2008  IRFR310TRLPBFA_2008  IRFR310TRPBF_2008  IRFR310TRPBFA_2008  
IRFU310PBF PDF
Vishay
Vishay Semiconductors
IRFU310PBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR310  IRFU310  SIHFR310  SIHFU310  IRFR310TRLPBFA  IRFR310TRPBFA  IRFR310TRRPBFA  SIHFR310TL-E3A  SIHFR310T-E3A  SIHFR310TR-E3A  
IRFU310PBF PDF
KERSEMI
Kersemi Electronic Co., Ltd.
IRFU310PBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR310  IRFR310PBF  IRFR310TRA  IRFR310TRLA  IRFR310TRLPBFA  IRFR310TRPBFA  IRFR310TRRPBFA  IRFU310  SIHFR310  SIHFR310-E3  
IRFU310PBF PDF

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