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IRFP360LC

  

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IR
International Rectifier
IRFP360LC HEXFET® Power MOSFET

Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.
The TO-247 package is

IRFP360LC PDF
Vishay
Vishay Semiconductors
IRFP360LC Power MOSFET

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred


other parts : IRFP360LCPBF  SIHFP360LC-E3  SIHFP360LC  
IRFP360LC PDF
Vishay
Vishay Semiconductors
IRFP360LCPBF Power MOSFET

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred


other parts : SIHFP360LC-E3  IRFP360LC  SIHFP360LC  
IRFP360LCPBF PDF
IR
International Rectifier
IRFP360LCPBF HEXFET® Power MOSFET

Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.
The TO-247 package is

IRFP360LCPBF PDF

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