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IRF3808

  

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IR
International Rectifier
IRF3808 AUTOMOTIVE MOSFET

Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional

IRF3808 PDF
KERSEMI
Kersemi Electronic Co., Ltd.
IRF3808 Power MOSFET

Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional

IRF3808 PDF
IR
International Rectifier
IRF3808L AUTOMOTIVE MOSFET

Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808S  
IRF3808L PDF
IR
International Rectifier
IRF3808S AUTOMOTIVE MOSFET

Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808L  
IRF3808S PDF
IR
International Rectifier
IRF3808PBF HEXFET Power MOSFET

Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Æ Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional

IRF3808PBF PDF
IR
International Rectifier
IRF3808LPBF_2004 HEXFET® Power MOSFET

AUTOMOTIVE MOSFET

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808SPBF_2004  
IRF3808LPBF PDF
IR
International Rectifier
IRF3808SPBF_2004 HEXFET® Power MOSFET

AUTOMOTIVE MOSFET

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808LPBF_2004  
IRF3808SPBF PDF
IR
International Rectifier
IRF3808LPBF HEXFET® Power MOSFET

AUTOMOTIVE MOSFET

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808SPBF  IRF3808STRLPBF  IRF3808STRRPBF  
IRF3808LPBF PDF
IR
International Rectifier
IRF3808SPBF HEXFET® Power MOSFET

AUTOMOTIVE MOSFET

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808LPBF  IRF3808STRLPBF  IRF3808STRRPBF  
IRF3808SPBF PDF
IR
International Rectifier
IRF3808STRLPBF HEXFET® Power MOSFET

AUTOMOTIVE MOSFET

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808LPBF  IRF3808SPBF  IRF3808STRRPBF  
IRF3808STRLPBF PDF
IR
International Rectifier
IRF3808STRRPBF HEXFET® Power MOSFET

AUTOMOTIVE MOSFET

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : IRF3808LPBF  IRF3808SPBF  IRF3808STRLPBF  
IRF3808STRRPBF PDF

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