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HUF75329D3S13

  

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Fairchild
Fairchild Semiconductor
HUF75329D3S 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 20A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”


other parts : 75329D  HUF75329D3  HUF75329D3ST  HUF75329D3T  
HUF75329D3S PDF
Intersil
Intersil
HUF75329D3S 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 20A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER© Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at:
      www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”


other parts : 75329D  HUF75329D3  HUF75329D3T  HUF75329D3ST  
HUF75329D3S PDF
Fairchild
Fairchild Semiconductor
HUF75329D3ST 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 20A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”


other parts : 75329D  HUF75329D3  HUF75329D3S  HUF75329D3T  
HUF75329D3ST PDF
Intersil
Intersil
HUF75329D3ST 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features
• 20A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER© Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at:
      www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”


other parts : 75329D  HUF75329D3  HUF75329D3S  HUF75329D3T  
HUF75329D3ST PDF
Fairchild
Fairchild Semiconductor
HUF75329D3S_13 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products.

Features
• 20A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”


other parts : 75329D_13  HUF75329D3ST_13  
HUF75329D3S_13 PDF
Fairchild
Fairchild Semiconductor
HUF75329D3ST_13 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products.

Features
• 20A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
      Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”


other parts : HUF75329D3S_13  75329D_13  
HUF75329D3ST_13 PDF

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