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HGTG30N60A4

  

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Fairchild
Fairchild Semiconductor
HGTG30N60A4 600 V SMPS IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.

Features
• 60 A, 600 V @ TC = 110°C
• Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 30 A
• Typical Fall Time. . . . . . . . . .


other parts : G30N60A4  
HGTG30N60A4 PDF
Intersil
Intersil
HGTG30N60A4 600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized


other parts : G30N60A4  
HGTG30N60A4 PDF
Fairchild
Fairchild Semiconductor
HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching


other parts : G30N60A4D  
HGTG30N60A4D PDF
Fairchild
Fairchild Semiconductor
HGTG30N60A4_04 600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized


other parts : G30N60A4_04  
HGTG30N60A4_04 PDF

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