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Fairchild
Fairchild Semiconductor
FDA16N50 500V N-Channel MOSFET

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
• 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
• Low gate charge ( typical 32 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


other parts : FDA16N50_F109  
FDA16N50 PDF
Fairchild
Fairchild Semiconductor
FDA16N50_2007 500V N-Channel MOSFET

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
• 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
• Low gate charge ( typical 32 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


other parts : FDA16N50_F109_2007  
FDA16N50 PDF
Fairchild
Fairchild Semiconductor
FDA16N50_F109 500V N-Channel MOSFET

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
• 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
• Low gate charge ( typical 32 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


other parts : FDA16N50  
FDA16N50_F109 PDF
Fairchild
Fairchild Semiconductor
FDA16N50_F109_2007 500V N-Channel MOSFET

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
• 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
• Low gate charge ( typical 32 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


other parts : FDA16N50_2007  
FDA16N50_F109 PDF

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