GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating： 1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State
Feature ● 50V/0.2A, RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications. ● SOT-23 for Surface Mount Package.
Applications ● Power Management in DC/DC Converters、 Portable and Battery-powered Products.
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
■ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
■ FEATURES * RDS(ON)=3.5Ω @ VGS=10V * RDS(ON)=6.0Ω @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified