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BSS13817

  

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Kexin
KEXIN Industrial
BSS138 N-Channel MOSFET

■ Features
● VDS (V) = 50V
● ID = 200 mA (VGS = 10V)
● RDS(ON) < 3.5Ω (VGS = 10V)
● Fast Switching Speed
● Low On-Resistance


other parts : KSS138  
BSS138 PDF
SILIKRON
Silikron Semiconductor Co.,LTD.
BSS138_V1.0 Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES
● VDS = 50V,ID = 0.22A
   RDS(ON) < 6Ω @ VGS=4.5V
   RDS(ON) < 3.5Ω @ VGS=10V
   ESD Rating: 1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

APPLICATION
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State

BSS138 PDF
TAITRON
TAITRON Components Incorporated
BSS138 SMD Power MOSFET Transistor (N-Channel)

SMD Power MOSFET Transistor (N-Channel)

Features
• Low On-Resistance:3.5Ω
• Low input capacitance:40pF
• Low output capacitance:12pF
• Low threshole:1.5V
• Fast switching speed:20nS
• RoHS Compliance

Application
• DC to DC converter
• Cellular & PCMCIA card
• Cordless telephone
• Power management in portable and battery etc.

BSS138 PDF
E-CMOS
E-CMOS Corporation
BSS138 N-Channel MOS

GENERAL FEATURES
● VDS = 50V,ID = 0.22A
● RDS(ON) < 6Ω @ VGS=4.5V
● RDS(ON) < 3.5Ω @ VGS=10V
● ESD Rating:1000V HBM
● High Power and current handing capability
● Halogen Free product is acquired
● Surface Mount Package

Applications
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays


other parts : BSS138-HF  
BSS138 PDF
ZPSEMI
ZP Semiconductor
BSS138 N-Channel Enhancement Mode MOSFET

Feature
● 50V/0.2A,
   RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A
   RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A
● Super High dense cell design for extremely low RDS(ON) .
● Reliable and Rugged.
● Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications.
● SOT-23 for Surface Mount Package.

Applications
● Power Management in DC/DC Converters、 Portable and Battery-powered Products.

BSS138 PDF
PanJit
PANJIT INTERNATIONAL
BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra

BSS138 PDF
Diodes
Diodes Incorporated.
BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability


other parts : BSS138-7-F  BSS138_08  
BSS138 PDF
LiteOn
LiteOn Technology
BSS138 N-Channel 50V MOSFET

Features:
● Surface-mounted package
● High Density Cell Design
● Low Threshold Voltage
● Halogen free

Application
● DC-DC
● Portable appliance
● Power management

BSS138 PDF
HOTTECH
GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
BSS138 Plastic-Encapsulate Mosfets

N-Channel MOSFET

FEATURES
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount package

BSS138 PDF
Fairchild
Fairchild Semiconductor
BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


other parts : BSS138_NL  BSS138_D87Z  
BSS138 PDF
Zetex
Zetex => Diodes
BSS138 SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

PARTMARKING DETAIL – SS

BSS138 PDF
UTC
Unisonic Technologies
BSS138 N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■ DESCRIPTION
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

■ FEATURES
* RDS(ON)=3.5Ω @ VGS=10V
* RDS(ON)=6.0Ω @ VGS=4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified


other parts : BSS138G-AE2-R  BSS138G-AL3-R  
BSS138 PDF

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