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NXP Semiconductors.
BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET

General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits
■ Logic-level compatible
■ Very fast switching
■ Trench MOSFET technology
■ AEC-Q101 qualified

■ Relay driver
■ High-speed line driver
■ Low-side loadswitch
■ Switching circuits



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