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BSS138

  

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FOSHAN
Foshan Blue Rocket Electronics Co.,Ltd.
BSS138 N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions
N-CHANNEL MOSFET in a SOT-23 Plastic Package.

Features
   Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package.

Applications
   Low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

BSS138 PDF
SILIKRON
Silikron Semiconductor Co.,LTD.
BSS138 Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES
● VDS = 50V,ID = 0.22A
   RDS(ON) < 6Ω @ VGS=4.5V
   RDS(ON) < 3.5Ω @ VGS=10V
   ESD Rating: 1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

APPLICATION
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State


other parts : S138  
BSS138 PDF
BWTECH
Bruckewell Technology LTD
BSS138 N-Channel 50-V(D-S) MOSFET

FEATURE
● High density cell design for extremely low RDS(on)
● Rugged and Relaible

APPLICATION
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays

BSS138 PDF
Diodes
Diodes Incorporated.
BSS138_Rev11-2 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability


other parts : BSS138-7-F_Rev11-2  
BSS138 PDF
Unspecified
Unspecified
BSS138 SMD Power MOSFET Transistor (N-Channel)

[TAITRON COMPONENTS INCORPORATED]

SMD Power MOSFET Transistor (N-Channel)

Features
• Low On-Resistance:3.5Ω
• Low input capacitance:40pF
• Low output capacitance:12pF
• Low threshole:1.5V
• Fast switching speed:20nS
• RoHS Compliance

Application
• DC to DC converter
• Cellular & PCMCIA card
• Cordless telephone
• Power management in portable and battery etc.

BSS138 PDF
NCEPOWER
Wuxi NCE Power Semiconductor Co., Ltd
BSS138 NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES
● VDS = 50V,ID = 0.22A
   RDS(ON) < 3Ω @ VGS=4.5V
   RDS(ON) < 2Ω @ VGS=10V
● Lead free product is acquired
● Surface Mount Package

Application
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays

BSS138 PDF
GOOD-ARK
GOOD-ARK
BSS138 50V N-Channel MOSFET

GENERAL FEATURES
● VDS = 50V,ID = 0.22A
   RDS(ON) < 6Ω @ VGS=4.5V
   RDS(ON) < 3.5Ω @ VGS=10V
   ESD Rating:1000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package

APPLICATIONS
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays


other parts : S138  
BSS138 PDF
Diodes
Diodes Incorporated.
BSS138_Rev6-2 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability


other parts : BSS138-7_Rev6-2  
BSS138 PDF
UTC
Unisonic Technologies
BSS138_2010 N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■ DESCRIPTION
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

■ FEATURES
* RDS(ON)=3.5Ω @ VGS=10V
* RDS(ON)=6.0Ω @ VGS=4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified


other parts : BSS138G-AE2-R_2010  
BSS138 PDF
Fairchild
Fairchild Semiconductor
BSS138_2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


other parts : BSS138_NL_2002  
BSS138 PDF
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd
BSS138 SOT-23 Plastic-Encapsulate MOSFETS

N-Channel 50-V(D-S) MOSFET

FEATURE
● High density cell design for extremely low RDS(on)
● Rugged and Relaible

APPLICATION
● Direct Logic-Level Interface: TTL/CMOS
● Drivers: Relays, Solenoids, Lamps, Hammers,Display,
● Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays

BSS138 PDF
Siemens
Siemens AG
BSS138 SIPMOS® Small-Signal Transistor

SIPMOS® Small-Signal Transistor

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V


other parts : Q67000-S216  Q67000-S566  BSS138E6327  BSS138E6433  
BSS138 PDF

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