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BLW76

  

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ASI
ASIASI
BLW76 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.

FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System

 

BLW76 PDF
Philips
PhilipsPhilips
BLW76 HF/VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups.
The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated

BLW76 PDF

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