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BD825

  

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Iscsemi
IscsemiIscsemi
BD825 Silicon NPN Power Transistor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 45V(Min)
• High DC Current Gain
• Low Saturation Voltage
• Complement to Type BD826
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Designed for driver-stages in hi-fi amplifiers and television circuits.

BD825 PDF
Philips
PhilipsPhilips
BD825 NPN power transistors

DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830.

FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).

APPLICATIONS
• General purpose
• Driver stages in hi-fi amplifiers and television circuits.


other parts : BD829  
BD825 PDF

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