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BD809

  

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Iscsemi
IscsemiIscsemi
BD809 Silicon NPN Power Transistors

DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

BD809 PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
BD809 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 


other parts : BD809G  BD810  BD810G  
BD809 PDF
Savantic
SavanticSavantic
BD809 Silicon NPN Power Transistors

DESCRIPTION
··With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

BD809 PDF
Motorola
MotorolaMotorola
BD809 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

. . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

• DC Current Gain —
   hFE = 30 (Min) @ IC = 2.0 Adc

 


other parts : BD810  
BD809 PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
BD809G 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 


other parts : BD809  BD810  BD810G  
BD809G PDF

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