■ Features● Low current (max. 100 mA)● Low voltage (max. 45 V).● Complements to BC859W/BC860W
• Power dissipation 200 mW
• Plastic case SOT-323
• Weight approx. 0.01 g
• Plastic material has UL classification 94V-0
• Standard packaging taped and reeled
DESCRIPTIONNPN transistor in a SOT323 plastic package.PNP complements: BC859W and BC860W.
FEATURES• Low current (max. 100 mA)• Low voltage (max. 45 V).
APPLICATIONS• Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
VOLTAGE 30/45/65 Volts CURRENT 150 mWatts
FEATURES• General purpose amplifier applications• NPN epitaxial silicon, planar design• Collector current IC = 100mA• In compliance with EU RoHS 2002/95/EC directives
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types:
BC856W, BC857W, BC858W
BC859W, BC860W (PNP)
NPN Silicon Epitaxial Planar Transistorfor general purpose and switching applications
• Power dissipation 200 mW• Plastic case SOT-323• Weight approx. 0.01 g• Plastic