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AO4422A

  

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AOSMD
AOSMDAOSMD
AO4422A N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical.


other parts : AO4422AL  
AO4422A PDF
AOSMD
AOSMDAOSMD
AO4422AL N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical.


other parts : AO4422A  
AO4422AL PDF

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