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AM29LV400B-100EE

  

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AMD
Advanced Micro Devices
AM29LV400B-100EE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION
The Am29LV400 is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system using only a single 3.0 volt VCC supply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ High performance
   — Full voltage range: access times as fast as 100 ns
   — Regulated voltage range: access times as fast as 90 ns
■ Ultra low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 10 mA read current
   — 20 mA program/erase current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to prevent any program or erase operations within that sector
      Sectors can be locked via programming equipment
      Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Typical 1,000,000 write cycles per sector
   (100,000 cycles minimum guaranteed)
■ Package option
   — 48-ball FBGA
   — 48-pin TSOP
   — 44-pin SO
■ Compatibility with JEDEC standards
   — Pinout and software compatible with single power supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data


other parts : AM29LV400  AM29LV400B-100EB  AM29LV400B-100EBB  AM29LV400B-100FB  AM29LV400B-100FBB  AM29LV400B-100SB  AM29LV400B-100SBB  AM29LV400B-100WAB  AM29LV400B-100WABB  AM29LV400B-120EB  
AM29LV400B-100EE PDF
AMD
Advanced Micro Devices
AM29LV400B-100EEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION
The Am29LV400 is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system using only a single 3.0 volt VCC supply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ High performance
   — Full voltage range: access times as fast as 100 ns
   — Regulated voltage range: access times as fast as 90 ns
■ Ultra low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 10 mA read current
   — 20 mA program/erase current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to prevent any program or erase operations within that sector
      Sectors can be locked via programming equipment
      Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Typical 1,000,000 write cycles per sector
   (100,000 cycles minimum guaranteed)
■ Package option
   — 48-ball FBGA
   — 48-pin TSOP
   — 44-pin SO
■ Compatibility with JEDEC standards
   — Pinout and software compatible with single power supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data


other parts : AM29LV400  AM29LV400B-100EB  AM29LV400B-100EBB  AM29LV400B-100FB  AM29LV400B-100FBB  AM29LV400B-100SB  AM29LV400B-100SBB  AM29LV400B-100WAB  AM29LV400B-100WABB  AM29LV400B-120EB  
AM29LV400B-100EEB PDF

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