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40N10

  

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Iscsemi
Inchange Semiconductor
40N10 N-Channel MOSFET Transistor

FEATURES
• Drain Current ID= 40A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 100V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.04Ω(Max)
• Fast Switching

APPLICATIONS
• Switching power supplies,converters, AC and DC motor controls

40N10 PDF
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD
40N10 40A mps,100 Volts N-CHANNEL MOSFET

FEATURE
● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A
● Low gate charge
● Low Ciss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability


other parts : 40N10F  40N10B  40N10H  
40N10 PDF
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD
40N10H 40A mps,100 Volts N-CHANNEL MOSFET

FEATURE
● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A
● Low gate charge
● Low Ciss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability


other parts : 40N10  40N10F  40N10B  
40N10H PDF
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD
40N10B 40A mps,100 Volts N-CHANNEL MOSFET

FEATURE
● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A
● Low gate charge
● Low Ciss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability


other parts : 40N10  40N10F  40N10H  
40N10B PDF
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD
40N10F 40A mps,100 Volts N-CHANNEL MOSFET

FEATURE
● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A
● Low gate charge
● Low Ciss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability


other parts : 40N10  40N10B  40N10H  
40N10F PDF

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