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2SJ218

  

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Hitachi
Hitachi -> Renesas Electronics
2SJ218 Silicon P-Channel MOS FET

Features
● Low on-resistance
● High speed switching
● 4 V gate drive device
   - Can be driven from 5 V source
● Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Application
  High speed power switching


other parts : J218  
2SJ218 PDF

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