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2SD2130

  

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Toshiba
Toshiba
2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications

● High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
● Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
● Zener diode included between collector and base.


other parts : D2130  
2SD2130 PDF
Toshiba
Toshiba
2SD2130_97 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE



other parts : D2130_97  
2SD2130_97 PDF

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