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2SD1766

  

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Willas
Willas Electronic Corp.
2SD1766 SOT-89 Plastic-Encapsulate Transistors



other parts : 2SD1766P  2SD1766Q  2SD1766R  
2SD1766 PDF
Kexin
KEXIN Industrial
2SD1766 Medium Power Transistor

Features
● Low VCE(sat), VCE(sat) = 0.5V (typical)
   (IC = 2A, IB = 0.2A).


other parts : 2SD1766P  2SD1766Q  2SD1766R  
2SD1766 PDF
WINNERJOIN
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
2SD1766 TRANSISTOR (NPN)

FEATURES
  Power dissipation
     PCM: 0.5 W (Tamb=25℃)
  Collector current
     ICM: 2 A
  Collector-base voltage
     V(BR)CBO: 40 V
  Operating and storage junction temperature range
     TJ, Tstg: -55℃ to +150℃


other parts : 2SD1766P  2SD1766Q  2SD1766R  
2SD1766 PDF
BILIN
Galaxy Semi-Conductor
2SD1766 NPN Silicon Epitaxial Planar Transistor

FEATURES
● Low saturation voltage:VCE(sat)=0.5V(Typ.)
● PC=0.5W(Mounted on ceramic substrate)
● Small flat package.
● Complementary pair with 2SB1188.

APPLICATIONS
● Power amplifier application.


other parts : 2SD1766Q  2SD1766P  2SD1766R  
2SD1766 PDF
ROHM
ROHM Semiconductor
2SD1766 Medium Power Transistor (32V, 2A)

Features
1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A)
2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M

Structure
   Epitaxial planar type
   NPN silicon transistor


other parts : 2SD1055  2SD1055R  2SD1227M  2SD1227MQ  2SD1758TLP  2SD1758TLQ  2SD1758TLR  2SD1766T100P  2SD1766T100Q  2SD1766T100R  
2SD1766 PDF
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.
2SD1766 TRANSISTOR (NPN)

FEATURES
● Low VCE(s<at).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
● Complements to 2SB1188


other parts : 2SD1766P  2SD1766Q  2SD1766R  
2SD1766 PDF
HOTTECH
GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
2SD1766 Plastic-Encapsulate Transistors

FEATURES
• Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
• Complements to 2SB1188


other parts : 2SD1766P  2SD1766Q  2SD1766R  
2SD1766 PDF
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.
2SD1766Q TRANSISTOR (NPN)

FEATURES
● Low VCE(s<at).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
● Complements to 2SB1188


other parts : 2SD1766  2SD1766P  2SD1766R  
2SD1766Q PDF
Kexin
KEXIN Industrial
2SD1766R Medium Power Transistor

Features
● Low VCE(sat), VCE(sat) = 0.5V (typical)
   (IC = 2A, IB = 0.2A).


other parts : 2SD1766  2SD1766P  2SD1766Q  
2SD1766R PDF
BILIN
Galaxy Semi-Conductor
2SD1766P NPN Silicon Epitaxial Planar Transistor

FEATURES
● Low saturation voltage:VCE(sat)=0.5V(Typ.)
● PC=0.5W(Mounted on ceramic substrate)
● Small flat package.
● Complementary pair with 2SB1188.

APPLICATIONS
● Power amplifier application.


other parts : 2SD1766  2SD1766Q  2SD1766R  
2SD1766P PDF
HOTTECH
GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
2SD1766Q Plastic-Encapsulate Transistors

FEATURES
• Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
• Complements to 2SB1188


other parts : 2SD1766  2SD1766P  2SD1766R  
2SD1766Q PDF
WINNERJOIN
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
2SD1766R TRANSISTOR (NPN)

FEATURES
  Power dissipation
     PCM: 0.5 W (Tamb=25℃)
  Collector current
     ICM: 2 A
  Collector-base voltage
     V(BR)CBO: 40 V
  Operating and storage junction temperature range
     TJ, Tstg: -55℃ to +150℃


other parts : 2SD1766  2SD1766P  2SD1766Q  
2SD1766R PDF

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