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2SD1407A-Y

  

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Toshiba
Toshiba
2SD1407A-Y TOSHIBA Transistor Silicon NPN Triple Diffused Type

Power Amplifier Applications

• High breakdown voltage: VCEO = 100 V
• Low collector saturation voltage: VCE (sat) = 2.0 V (max)
• Complementary to 2SB1016A



other parts : 2SD1407A  2SD1407A-O  2SD1407A-R  D1407A  D1407A-O  D1407A-R  D1407A-Y  
2SD1407A-Y PDF

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