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2SC3998

  

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2SC3998 NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (adoption of HVP process).
· Adoption of MBIT process.


other parts : C3998  
2SC3998 PDF
Iscsemi
IscsemiIscsemi
2SC3998 Silicon NPN Power Transistor

DESCRIPTION
• High Switching Speed
• High Breakdown Voltage-
   : V(BR)CBO= 1500V(Min)
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Designed for horizontal deflection output applications.


other parts : C3998  
2SC3998 PDF

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