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2SC3710A97

  

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Toshiba
Toshiba
2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

High-Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1452A


other parts : 2SC3710A-YF  C3710A-YF  C3710A  
2SC3710A PDF
Iscsemi
Inchange Semiconductor
2SC3710A Silicon NPN Power Transistor

DESCRIPTION
• Low Collector Saturation Voltage-
   : VCE(sat)= 0.4V(Max)@IC= 6A
• Fast Switching Speed
• Complement to Type 2SA1452A
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Designed for high current switching applications


other parts : C3710A  
2SC3710A PDF
Toshiba
Toshiba
2SC3710A_97 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HIGH CURRENT SWITCHING APPLICATIONS

• Low collector saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1452A


other parts : 2SC3710_97  C3710A_97  C3710_97  
2SC3710A_97 PDF
Toshiba
Toshiba
2SC3710A-YF TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

High-Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1452A


other parts : 2SC3710A  C3710A-YF  C3710A  
2SC3710A-YF PDF
Toshiba
Toshiba
2SC3710A_04 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

High-Current Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1452A


other parts : C3710A_04  
2SC3710A_04 PDF

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