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2SC2166

  

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Manufacturer Part no Description View
Hitachi
HitachiHitachi
2SC2166 NPN EPITAXIAL PLANAR TYPE RF Power Transistor


other parts : C2166  
2SC2166 PDF
JMNIC
JMNICJMNIC
2SC2166 Silicon NPN Power Transistor

DESCRIPTION
·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V
·High Reliability

APPLICATIONS
·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.


other parts : C2166  
2SC2166 PDF
NJSEMI
NJSEMINJSEMI
2SC2166 Silicon NPN Power Transistor Final RF Power OUTPUT
other parts : C2166  
2SC2166 PDF
Mitsubishi
MitsubishiMitsubishi
2SC2166 NPN EPITAXIAL PLANAR TYPE RF Power Transistor


other parts : C2166  
2SC2166 PDF

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