COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.
The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low frequency switching applications.
■ STMicrolectronics PREFERRED SALESTYPE
■ HIGH GAIN
■ NPN DARLINGTON
■ HIGH CURRENT
■ HIGH DISSIPATION
■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE