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2N6059

  

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Central-Semiconductor
Central-SemiconductorCentral-Semiconductor
2N6059 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

 


other parts : 2N6050  2N6051  2N6052  2N6057  2N6058  
2N6059 PDF
Mospec
MospecMospec
2N6059 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

...designed lor general-purpose power amplifier and low frequency switching applications

FEATURES:
* Monolithic Construction with Butt-in Base-Emitter Shunt Resistors.
* High DC Current Gain -
   hFE = 3500(typ)@ Ic=5.0 A

 


other parts : 2N6050  2N6051  2N6052  2N6057  2N6058  
2N6059 PDF
Boca-Semiconductor
Boca-SemiconductorBoca-Semiconductor
2N6059 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS


other parts : 2N6050  2N6051  2N6052  2N6057  2N6058  
2N6059 PDF
JMNIC
JMNICJMNIC
2N6059 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3 package
·High gain
·High current
·High dissipation
·Complement to type 2N5883/2N5884

APPLICATIONS
·They are intended for use in power linear and low frequency switching applications

 


other parts : 2N6058  
2N6059 PDF
Iscsemi
IscsemiIscsemi
2N6059 Silicon NPN Darlingtion Power Transistor

DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain
   hFE = 750 (Min) @ IC = 6A
·Collector-Emitter Sustaining Voltage
   VCEO(SUS)= 100V(Min)
·Complement to type 2N6052

APPLICATIONS
·Designed for general purpose amplifier and low frequency switching applications.

 

2N6059 PDF
NJSEMI
NJSEMINJSEMI
2N6059 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

...designed lor general-purpose power amplifier and low frequency switching applications

FEATURES:
* Monolithic Construction with Butt-in Base-Emitter Shunt Resistors.
* High DC Current Gain -
   hFE = 3500(typ)@ Ic=5.0 A

 


other parts : 2N6050  2N6051  2N6052  2N6057  2N6058  
2N6059 PDF
ST-Microelectronics
ST-MicroelectronicsST-Microelectronics
2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION
The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low frequency switching applications.

■ STMicrolectronics PREFERRED SALESTYPE
■ HIGH GAIN
■ NPN DARLINGTON
■ HIGH CURRENT
■ HIGH DISSIPATION
■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

APPLICATIONS
■ LINEAR AND SWITCHING

2N6059 PDF
ON-Semiconductor
ON-SemiconductorON-Semiconductor
2N6059 Darlington Complementary Silicon Power Transistors

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS 150 WATTS

. . . designed for general−purpose amplifier and low frequency switching applications.

• High DC Current Gain —
   hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA
   VCEO(sus) = 80 Vdc (Min) — 2N6058
      100 Vdc (Min) — 2N6052,


other parts : 2N6052  2N6058  
2N6059 PDF
Semelab
SemelabSemelab
2N6059 SILICON MULTI-EPITAXIAL NPN TRANSISTOR

• High Current Capability.
• Hermetic TO3 Metal package.
• Screening Options Available

 

2N6059 PDF
Savantic
SavanticSavantic
2N6059 Silicon NPN Power Transistors

DESCRIPTION
·With TO-3 package
·High current ;high dissipation
·DARLINGTON
·Complement to type 2N5883;2N5884

APPLICATIONS
·They are intended for use in power linear and low frequency switching applications

 


other parts : 2N6058  
2N6059 PDF

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