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29C512

  

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Atmel
Atmel Corporation
AT29C512-20DC 512K (64K x 8) 5-Volt Only CMOS Flash PEROM



other parts : AT29C512-12DI  AT29C512-12DC  AT29C512-12DM  AT29C512-12DM/883  AT29C512-15DI  AT29C512-15DC  AT29C512-15DM  AT29C512-15DM/883  AT29C512-20DI  AT29C512-20DM  
AT29C512-20DC PDF
Atmel
Atmel Corporation
AT29C512-70JC 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12  AT29C512-12JC  AT29C512-12JI  AT29C512-12TC  AT29C512-12TI  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TC  
AT29C512-70JC PDF
Atmel
Atmel Corporation
AT29C512-12 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12JC  AT29C512-12JI  AT29C512-12TC  AT29C512-12TI  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TC  AT29C512-15TI  
AT29C512-12 PDF
Atmel
Atmel Corporation
AT29C512-70TI 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12  AT29C512-12JC  AT29C512-12JI  AT29C512-12TC  AT29C512-12TI  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TC  
AT29C512-70TI PDF
Atmel
Atmel Corporation
AT29C512-12JC 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12  AT29C512-12JI  AT29C512-12TC  AT29C512-12TI  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TC  AT29C512-15TI  
AT29C512-12JC PDF
Atmel
Atmel Corporation
AT29C512-90JC 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12  AT29C512-12JC  AT29C512-12JI  AT29C512-12TC  AT29C512-12TI  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TC  
AT29C512-90JC PDF
Atmel
Atmel Corporation
AT29C512-90PC 512K (64K x 8) 5-volt Only Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C512 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can be gin .

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges


other parts : AT29C512-70PC  AT29C512-90PI  AT29C512-12PC  AT29C512-12PI  AT29C512-15PC  AT29C512-15PI  
AT29C512-90PC PDF
Atmel
Atmel Corporation
AT29C512-12TI 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12  AT29C512-12JC  AT29C512-12JI  AT29C512-12TC  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TC  AT29C512-15TI  
AT29C512-12TI PDF
Atmel
Atmel Corporation
AT29C512-15DM/883 512K (64K x 8) 5-Volt Only CMOS Flash PEROM



other parts : AT29C512-12DI  AT29C512-12DC  AT29C512-12DM  AT29C512-12DM/883  AT29C512-15DI  AT29C512-15DC  AT29C512-15DM  AT29C512-20DI  AT29C512-20DC  AT29C512-20DM  
AT29C512-15DM/883 PDF
Atmel
Atmel Corporation
AT29C512-15TC 512K 64K x 8 5-volt Only CMOS Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATAPolling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option


other parts : 29C512  AT29C512-12  AT29C512-12JC  AT29C512-12JI  AT29C512-12TC  AT29C512-12TI  AT29C512-15  AT29C512-15JC  AT29C512-15JI  AT29C512-15TI  
AT29C512-15TC PDF
Atmel
Atmel Corporation
AT29C512-20DM/883 512K (64K x 8) 5-Volt Only CMOS Flash PEROM



other parts : AT29C512-12DI  AT29C512-12DC  AT29C512-12DM  AT29C512-12DM/883  AT29C512-15DI  AT29C512-15DC  AT29C512-15DM  AT29C512-15DM/883  AT29C512-20DI  AT29C512-20DC  
AT29C512-20DM/883 PDF
Atmel
Atmel Corporation
AT29C512-70PC 512K (64K x 8) 5-volt Only Flash Memory

Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C512 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can be gin .

Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Sector Program Operation
   – Single Cycle Reprogram (Erase and Program)
   – 512 Sectors (128 Bytes/Sector)
   – Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
   – 50 mA Active Current
   – 100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges


other parts : AT29C512-90PC  AT29C512-90PI  AT29C512-12PC  AT29C512-12PI  AT29C512-15PC  AT29C512-15PI  
AT29C512-70PC PDF

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