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1N4454UR-1MINI

  

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Microsemi
Microsemi Corporation
1N4454UR-1 SWITCHING DIODE

FEATURES
• 1N4454UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/144
• SWITCHING DIODE
• METALLURGICALLY BONDED
• HERMETICALLY SEALED
• DOUBLE PLUG CONSTRUCTION
• ALSO AVAILABLE AS LL4454, CDLL4454, & MLL4454

MAXIMUM RATINGS AT 25 °C
Operating Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
Surge Current, Sine, 1uS: 4.0A
Total Power Dissipation: 500mW
Operating Current: 200mA, TA= +25°C
Derating

1N4454UR-1 PDF
MA-COM
M/A-COM Technology Solutions, Inc.
1N4454UR-1 Silicon Switching Diode

Features
● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144
● Metallurgically Bonded
● Hermetically Sealed
● Double Plug Construction


other parts : 1N4454UR  
1N4454UR-1 PDF
CDI
Compensated Devices => Microsemi
1N4454UR-1 SWITCHING DIODE

• 1N4454UR and 4454UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION

MAXIMUM RATINGS
Junction Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
Operating Current: 200 mA @ TA = +25°C
Derating Factor: 1.33 mA/°C Above TA = + 25°C
Surge Current A: 1A (pk), Pw = 1 sec
Surge Current B: 4A (pk), Pw = 1 µs


other parts : 1N4454UR  CDLL4454  
1N4454UR-1 PDF
Microsemi
Microsemi Corporation
1N4454UR-1_MINI MINI-MELF-SMD Silicon Switching Diode

Features
● Six sigma quality
● Metallurgically bonded
● BKCs Sigma Bond™ plating for problem free solderability
● Also comes in DO-35 glass package
● Full UR approval to Mil-S-19500 /144
● Available up to JANTXV levels
● "S" level screening available to Source Control Drawings

Applications
  Used in general purpose applications, where performance, space and switching speed are important.

1N4454UR-1_MINI PDF

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