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1N4150UR-1

  

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Microsemi
MicrosemiMicrosemi
1N4150UR-1_V2 SWITCHING DIODE

• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION

MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = + 25°C
Derating: 3.1 mA dc/°C Above TEC = + 110°C
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)

1N4150UR-1 PDF
Microsemi
MicrosemiMicrosemi
1N4150UR-1 SWITCHING DIODE

• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION

MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = + 25°C
Derating: 3.1 mA dc/°C Above TEC = + 110°C
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)


other parts : 1N3600UR  CDLL4150  CDLL3600  
1N4150UR-1 PDF
CDI
CDICDI
1N4150UR-1 SWITCHING DIODE

• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION

MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = + 25°C
Derating: 3.1 mA dc/°C Above TEC = + 110°C
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)


other parts : 1N3600UR  CDLL4150  CDLL3600  
1N4150UR-1 PDF

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