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FQP12N60C Datasheet PDF - Unspecified

Part NameDescriptionManufacturer
FQP12N60C 600V N-Channel MOSFET Unspecified
Unspecified 
Other PDF  no available.
FQP12N60C Datasheet PDF : FQP12N60C pdf   
FQPF12N60C image

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General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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