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MJE13003G-P-G-T60-T Datasheet PDF - Unisonic Technologies

Part NameDescriptionManufacturer
MJE13003G-P-G-T60-T NPN SILICON POWER TRANSISTOR UTC
Unisonic Technologies UTC
Other PDF  no available.
MJE13003G-P-G-T60-T Datasheet PDF : MJE13003G-P-G-T60-T pdf   
MJE13003-P image

DESCRIPTION
These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. 

FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability

„  APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits

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