General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V
   –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

Applications
■ Notebook computer power management