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FDN308P Datasheet PDF - TY Semiconductor

Part NameDescriptionManufacturer
FDN308P P-Channel 2.5V specified MOSFET Twtysemi
TY Semiconductor Twtysemi
FDN308P Datasheet PDF : FDN308P pdf   
FDN308P image

General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

• –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V
                 RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

• Power management
• Load switch
• Battery protection

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