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TLP421 Datasheet PDF - Toshiba

Part NumberTLP421 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP421 Datasheet PDF : TLP421 pdf   
TLP421 image

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The TOSHIBA TLP421 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)).

• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
   Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577
• BSI approved:
   BS EN60065: 2002
   Approved no.8411
   BS EN60950-1: 2002
   Approved no.8412
• SEMKO approved: EN60065, EN60950, EN60335
   Approved no.9910249/01
• Option(D4)type
   TÜV approved:
         DIN EN 60747-5-2
         Approved no. R9950202
      Maximum operating insulation voltage: 890VPK
      Maximum permissible overvoltage: 8000VPK
   (Note): When a EN 60747-5-2 approved type is needed,
      please designate the “Option(D4)”
   Making the VDE application: DIN EN 60747-5-2


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