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TC51WHM516AXBN65 Datasheet PDF - Toshiba

Part NameDescriptionManufacturer
TC51WHM516AXBN65 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM Toshiba
Toshiba Toshiba
Other PDF  no available.
TC51WHM516AXBN65 Datasheet PDF : TC51WHM516AXBN65 pdf   
TC51WHM516AXBN65 image

DESCRIPTION
The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power standby.

FEATURES
• Organized as 2,097,152 words by 16 bits
• Single power supply voltage of 2.6 to 3.3 V
• Direct TTL compatibility for all inputs and outputs
• Deep power-down mode: Memory cell data invalid
• Page operation mode: Page read operation by 8 words
• Logic compatible with SRAM R/W ( WE ) pin
• Standby current
        Standby 70 µA
        Deep power-down standby 5 µA

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