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S8201 Datasheet PDF - Toshiba

Part NameDescriptionManufacturer
S8201 Silicon N Channel MOS Type (U-MOS II) Field Effect Transistor Toshiba
Toshiba Toshiba
Other PDF  no available.
S8201 Datasheet PDF : S8201 pdf   
TPCS8201 image

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs

Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
High forward transfer admittance: |Yfs| = 13 S (typ.)
Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)

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