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K3561 Datasheet PDF - Toshiba

Part NumberK3561 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Other PDF
K3561 Datasheet PDF : K3561 pdf   
K3561 image

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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