datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  Toshiba  >>> K3561 PDF

K3561 Datasheet PDF - Toshiba

Part NumberK3561 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Other PDF
K3561 Datasheet PDF : K3561 pdf   
K3561 image

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Other manufacturer searches related to K3561

2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3743 View Unspecified
2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 View Unspecified
2SK1348 Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III) 2SK1348 View Unspecified
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A View SANYO -> Panasonic
2SK2320 Field Effect Transistor Silicon N-Channel MOS Type 2SK2320 View Unspecified
2SK1358 Field Effect Transistor Silicon N Channel MOS Type 2SK1358 View New Jersey Semiconductor
2SK941 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L²-π-MOSIII) 2SK941 View Unspecified
3SK249 Silicon N-Channel Dual Gate MOS Type Field Effect Transistor 3SK249 View New Jersey Semiconductor
2SK2413 MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor 2SK2413 View NEC => Renesas Technology
2SJ645 P-channel MOS-type silicon field-effect transistor For ultra-high-speed switching 2SJ645 View SANYO -> Panasonic

Share Link : 

Language : 한국어   简体中文   日本語   русский   español


All Rights Reserved © datasheetbank.com 2014 - 2018  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]