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K10A60 Datasheet PDF - Toshiba

Part NumberK10A60 Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications
K10A60 Datasheet PDF : K10A60 pdf   
K10A60D image

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

• High forward transfer admittance: |Yfs| = 6.0 S (typ.)

• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

K10A60

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